MBRF830 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

MBRF830 thru MBRF8100
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 100Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
●Metal of silicon rectifier , majority carrier conduction
●Guard ring for transient protection
●Low power loss,high efficiency
●High current capability,low VF
●High surge capacity
●Plastic package has UL flammability
classification 94V-0
●For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
ITO-220AC
.406(10.3)
.386(9.8)
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.04 MAX
(1.0)
.610(15.5)
.571(14.5)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
MECHANICAL DATA
●Case: ITO-220AC molded plastic
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.157(4.0)
.142(3.6)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VRRM
VRMS
MBRF830 MBRF840 MBRF850 MBRF860 MBRF880 MBRF8100
30
40
50
60
80
100
21
28
35
42
56
70
UNIT
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current ( See Fig.1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Peak Forward
IF=8A @TJ=25℃
Voltage (Note1)
IF=8A @TJ=125℃
IF=16A @TJ=25℃
IF=16A @TJ=125℃
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@TJ=25℃
@TJ=125℃
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
VDC
I(AV)
IFSM
VF
IR
CJ
RθJC
TJ
TSTG
30
40
50
60
8.0
150
0.70
0.80
0.57
0.70
0.84
0.95
0.72
0.85
0.1
15
250
3.0
-55 to +150
-55 to +175
80
100
V
A
A
0.85
0.75
V
0.95
0.85
0.1
10
mA
280
pF
2.0
℃/W
℃
℃
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
~ 230 ~