MBR1630CT_17 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS

MBR1630CT thru MBR16150CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 150Volts
FORWARD CURRENT - 16.0 Amperes
FEATURES
●Metal of silicon rectifier , majority carrier conduction
●Guard ring for transient protection
●Low power loss,high efficiency
●High current capability,low VF
●High surge capacity
●Plastic package has UL flammability
.135(3.44)
.103 (2.62)
TO-220AB
.413(10.5)
.374(9.5)
.153(3.9)
.146(3.7)
.270(6.9)
.230(5.8)
.610(15.5)
.583(14.8)
.189(4.8)
.173(4.4)
.055(1.4)
.047(1.2)
classification 94V-0
●For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
●Case: TO-220AB molded plastic
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
.057(1.45)
.045(1.14)
.043(1.1)
.032(0.8)
.102(2.6)
.091(2.3)
.177
(4.5)
MAX
.583(14.8)
.531(13.5)
.024(0.6)
.012(0.3)
.(133.58)MAX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MBR
1630CT
30
MBR
1640CT
40
MBR
1650CT
50
MBR
1660CT
60
MBR MBR MBR
1680CT 16100CT 16150CT
80
100
150
Maximum RMS Voltage
VRMS
21
28
35
42
56
70
105
Maximum DC Blocking Voltage
VDC
30
40
50
60
80
100
150
Maximum Average Forward
I(AV)
Rectified Current ( See Fig.1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
Super Imposed on Rated Load (JEDEC Method)
Peak Forward
IF=8A @TJ=25℃
Voltage (Note1)
IF=8A @TJ=125℃
VF
IF=16A @TJ=25℃
IF=16A @TJ=125℃
Maximum DC Reverse Current @TJ=25℃
IR
at Rated DC Bolcking Voltage @TJ=125℃
Typical Junction Capacitance (Note2)
CJ
16.0
150
0.7
0.75
0.57
0.65
0.72
-
-
-
0.3
10
400
0.85
1.05
0.75
0.92
0.95
-
0.85
-
0.1
5.0
200
Typical Thermal Resistance (Note3)
RθJC
3.0
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
UNIT
V
V
V
A
A
V
mA
pF
℃/W
℃
℃
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
4.The typical data above is for reference only(典型值仅供参考).
Rev. 7, 16-Mar-2017