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LL4148 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes
SMALL SIGNAL
SWITCHING DIODE
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
MECHANICAL DATA
●Case: Mini-MELF glass case
●Polarity: Color band denotes cathode
●Weight : Approx.0.05 grams
LL4148
REVERSE VOLTAGE - 75 Volts
FORWARD CURRENT - 0.15Amperes
DL - 35
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.063(1.6)
.055(1.4)
.020(0.5)
.012(0.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4148
Reverse Vltage
VR
Peak Reverse Voltage
VRM
Average Forward Rectified Current
Half Wave Rectification with Resist .load
IO
at Tamb=25℃ and f≧50HZ
Forward Surge Current at t<1s and TJ=25℃
IFSM
Power Dissipation at Tamb=25℃
Ptot
Junction Temperature
TJ
Storage Temperature Range
TSTG
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
75
100
150
500
500(1)
175
ï¹£65 toï¹¢175
TYP
MAX
Forward Voltage at IF=10mA
Leakage Current
at VR=20V
at VR=75V
at VR=20V TJ=150℃
Capacitance at VF=VR=0V
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
VF
ï¹£
ï¹£
1
IR
-
ï¹£
25
IR
ï¹£
ï¹£
5
IR
ï¹£
ï¹£
50
Ctot
ï¹£
ï¹£
4
Vfr
ï¹£
-
2.5
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient
Rectification Effciency at 100MHZ VRF=2V
trr
ï¹£
ï¹£
RθJA
ï¹£
ï¹£
ηV
0.45
ï¹£
4
350(1)
ï¹£
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
~ 416 ~
UNIT
V
V
mA
mA
mW
℃
℃
UNIT
V
uA
uA
uA
pF
v
ns
K/W
ï¹£