|
LL4148 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes | |||
|
SMALL SIGNAL
SWITCHING DIODE
FEATURES
â Silicon epitaxial planar diode
â High speed switching diode
â 500mW power dissipation
MECHANICAL DATA
âCase: Mini-MELF glass case
âPolarity: Color band denotes cathode
âWeight : Approx.0.05 grams
LL4148
REVERSE VOLTAGE - 75 Volts
FORWARD CURRENT - 0.15Amperes
DL - 35
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.063(1.6)
.055(1.4)
.020(0.5)
.012(0.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25â ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4148
Reverse Vltage
VR
Peak Reverse Voltage
VRM
Average Forward Rectified Current
Half Wave Rectification with Resist .load
IO
at Tamb=25â and fâ§50HZ
Forward Surge Current at tï¼1s and TJ=25â
IFSM
Power Dissipation at Tamb=25â
Ptot
Junction Temperature
TJ
Storage Temperature Range
TSTG
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
75
100
150
500
500(1)
175
ï¹£65 toï¹¢175
TYP
MAX
Forward Voltage at IF=10mA
Leakage Current
at VR=20V
at VR=75V
at VR=20V TJ=150â
Capacitance at VF=VR=0V
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
VF
ï¹£
ï¹£
1
IR
-
ï¹£
25
IR
ï¹£
ï¹£
5
IR
ï¹£
ï¹£
50
Ctot
ï¹£
ï¹£
4
Vfr
ï¹£
-
2.5
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient
Rectification Effciency at 100MHZ VRF=2V
trr
ï¹£
ï¹£
RθJA
ï¹£
ï¹£
ηV
0.45
ï¹£
4
350(1)
ï¹£
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
~ 416 ~
UNIT
V
V
mA
mA
mW
â
â
UNIT
V
uA
uA
uA
pF
v
ns
K/W
ï¹£
|
▷ |