KBU6005_17 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

SILICON BRIDGE RECTIFIERS
FEATURES
●Surge overload rating -175 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique
●Plastic material has UL
●Mounting postition:Any
●Mounting torgue:5 In.Ib.Max
KBU6005 thru KBU610
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 6.0 Amperes
.700(17.8)
.600(16.8)
KBU
.165(4.2)*45°
.935(23.7)
.895(22.7)
.15 X23L
(3.8 X5.7L)
HOLE THRU
300
(7.5)
.780(19.8)
.740(18.8)
(12.50.04)MIN.
.052(1.3)DIA.
.048(1.2)TYP.
.087(2.2)
.071(1.8)
.220(5.6)
.180(4.6)
.276(7.0)
.256(6.5)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL KBU6005 KBU601 KBU602 KBU604 KBU606 KBU608 KBU610
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Maximum Average Forward
I(AV)
6.0
Rectified Output Current at
TC=100℃
Peak Forward Surge Current 8.3ms single
Half Sine-Wave Super Imposed on Rated Load
IFSM
175
(JEDEC Method)
Maximum Instantanous Forward Voltage Drop
VF
1.0
per Element at 3.0A
Maximum Reverse Leakage at rated TJ=25℃
IR
DC Blocking Voltage Per Element TJ=100℃
10
200
Typical Junction Capacitance Per Element (Note1)
CJ
260
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to+150
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.The typical data above is for reference only(典型值仅供参考).
UNIT
V
V
V
A
A
V
μA
pF
℃
℃
Rev. 7, 16-Mar-2017