HY6N60T Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 600V / 6.0A N-Channel Enhancement Mode MOSFET

HY6N60T / HY6N60FT
600V / 6.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE
HY6N60T
6N60T
TO-220AB
HY6N60FT
6N60FT
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
600V, R_DS(ON)=1.8Ω@V_GS=10V, I_D=3.0A
1
GD23
S
TO-220AB
1
G _D23
S
ITO-220AB
2 Drain
1
Gatee
3 Source
Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )
Parameter
S ymb o l HY6 N6 0 T
HY6N6 0F T Uni ts
Drain-Source Voltage
V _DS
600
V
Gate-Source Voltage
V _GS
+30
V
Continuous Drain Current
T_C=2 5 ^OC
I_D
6
6
A
Pulsed Drain Current ¹⁾
I_DM
24
24
A
Maximum Power Dissipation
Derating Factor
T_C=2 5 ^OC
P_D
86
0.69
36.8
0.29
W
Avalanche Energy with Single Pulse
I_AS=6A, VDD=90V, L=18mΗ
E _AS
324
mJ
Op e r a ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e T_J,T_STG
-55 to +150
O_C
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PA RA ME TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R_θJC
R_θJA
HY6 N6 0 T
1.45
62.5
HY6N60F T
3.4
100
Uni ts
O_{C /W}
O_{C /W}
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
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