HY4N60D Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 600V / 4.0A N-Channel Enhancement Mode MOSFET

HY4N60D / HY4N60M
600V / 4.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-252 / ITO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE
HY4N60D
4N60D
TO-252
HY4N60M
4N60M
TO-251
PACKING
2500PCS/REEL
80PCS/TUBE
600V, R_DS(ON)=2.4Ω@V_GS=10V, I_D=2.0A
12
G ^D3
S
TO-252
GD¹ 2_S3
TO-251
2 Drain
1
Gatee
3 Source
Absolute Maximum Ratings (T_C=25^OC unless otherwise noted )
Parameter
S ymbo l HY4N6 0D
HY4 N6 0 M
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C= 2 5 ^OC
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C= 2 5 ^OC
Avalanche Energy with Single Pulse
I_AS=4A, VDD=90V, L=27.5mΗ
Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e ra ture Ra ng e
V_DS
V _GS
I_D
I_{D M}
P_D
E _AS
T_J,T_STG
600
+30
4
4
16
56.8
0.46
16
48
0.39
220
-55 to +150
Units
V
V
A
A
W
mJ
O_C
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PA RA ME TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R_θJC
R_θJA
HY4 N6 0 D
2.2
50
H Y4 N 6 0 M
2.6
110
Uni ts
O_{C /W}
O_{C /W}
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
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