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HY2N70D Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 700V / 2A N-Channel Enhancement Mode MOSFET | |||
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700V / 2A
N-Channel Enhancement Mode MOSFET
Features
⢠Low On-State Resistance
⢠Fast Switching
⢠Low Gate Charge & Low CRSS
⢠Fully Characterized Avalanche Voltage and Current
⢠Specially Desigened for AC Adapter, Battery Charger and SMPS
⢠In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
⢠Case: TO-252 / TO-251 Molded Plastic
⢠Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY2N70D
2N70D
TO-252 2500PCS/REEL
HY2N70M
2N70M
TO-251 80PCS/TUBE
HY2N70D 0F.01I0G. 2S0INâ2.G2MLEAX0I.M4UM05.N6ON10- / HY2N70M
700V, RDS(ON)=6.5W@VGS=10V, ID=1A
TO-252
TO-251
1
G
2
D
3
S
1
G
2
D
3
S
2 Drain
1
Gate
3 Source
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol HY2N70D
HY2N70M
Drain-Source Voltage
VDS
700
Gate-Source Voltage
VGS
+30
Continuous Drain Current
TC=25â
ID
2
2
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TC=25â
Avalanche Energy with Single Pulse
IAS=2A, VDD=95V, L=60mH
Operating Junction and Storage Temperature Range
IDM
PD
EAS
TJ, TSTG
8
8
43.8
43
0.35
0.35
120
-55 to +150
Note : 1. Maximum DC current limited by the package
Units
V
V
A
A
W
mJ
â
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
RqJC
RqJA
HY2N70D
2.85
50
HY2N70M
2.9
110
Units
â/W
â/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGNãFUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
PAGE.1
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