HY2N65T Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – 650V / 2A N-Channel Enhancement Mode MOSFET

HY2N65T / HY2N65FT
650V / 2A
N-Channel Enhancement Mode MOSFET
650V, R_DS(ON)=4.6W@V_GS=10V, I_D=1A
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C_RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
1
2
3
ITO-220AB
12
3
2 Drain
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY2N65T
2N65T
TO-220AB 50PCS/TUBE
HY2N65FT
2N65FT
ITO-220AB 50PCS/TUBE
1
Gate
3 Source
Absolute Maximum Ratings (T_C=25°C unless otherwise specified )
Parameter
Symbol HY2N65T
HY2N65FT
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
+30
Continuous Drain Current
T_C=25℃
I_D
2
2
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=25℃
Avalanche Energy with Single Pulse
I_AS=2A, V_DD=60V, L=50mH
Operating Junction and Storage Temperature Range
I_DM
P_D
E_AS
T_J, T_STG
8
8
44.5
19.2
0.36
0.16
100
-55 to +150
Units
V
V
A
A
W
mJ
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
R_qJC
R_qJA
HY2N65T
2.8
50
HY2N65FT
6.5
110
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
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