HTRI20L100CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS

HTR20L100CT, HTRF20L100CT
HTRI20L100CT, HTRB20L100CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Low VF=0.51V at IF=5A
SCHOTTKY BARRIER RECTIFIERS
ChipSize
80
FEATURES
REVERSE VOLTAGE 100
Volts
FORWARD CURRENT _{20 Amperes}
L
TO-220AB
ITO-220AB
Pb
●Metal of silicon rectifier , majority carrier conduction
●Trench Schottky Technology
●Low power loss, high efficiency
RoHS
COMPLIANT
●High current capability, low VF
●High surge capacity
●Plastic package has UL flammability
classification 94V-0
HTR20L100CT HTRF20L100CT
●For use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
●Case: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
HTRB20L100CT HTRI20L100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL HTR20L100CT, HTRF20L100CT, HTRI20L100CT, HTRB20L100CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
Maximum RMS Voltage
VRMS
70
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified Current ( See Fig.1)
20
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
10
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
140
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
I_RRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Breakdown voltage per diode
Forward Voltage (Note1)
V_BR
IF=5A @TJ=25℃
110 (minimun)
0.55
IF=5A @TJ=125℃
V_F
IF=10A @TJ=25℃
0.51
0.69
IF=10A @TJ=125℃
0.63
Maximum DC Reverse Current @TJ=25℃
IR
50
at Rated DC Bolcking Voltage @TJ=125℃
30
Typical Junction Capacitance (Note2)
CJ
437
Max
-
0.59
0.55
0.74
0.67
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
HTR20L100CT HTRF20L100CT HTRI20L100CT
HTRB20L100CT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
V
V
V
A
A
A
℃
℃
UNIT
V
V
uA
mA
pF
UNIT
℃/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017