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HTRI20I60CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS | |||
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HTR20I60CT, HTRF20I60CT
HTRI20I60CT, HTRB20I60CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Ultra Low VF=0.29V at IF=5A
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE 60
FORWARD CURRENT 20
Volts
Amperes
ChipSize
FEATURES
87 I
TO-220AB
ITO-220AB
Pb
âMetal of silicon rectifier , majority carrier conduction
âTrench Schottky Technology
âLow power loss, high efficiency
HALOGEN
FREE
âHigh current capability, low VF
âHigh surge capacity
âPlastic package has UL flammability
classification 94V-0
HTR20I60CT
HTRF20I60CT
RoHS
COMPLIANT
âFor use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
âCase: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
âPolarity: As marked on the body
âWeight: 0.08ounces,2.24 grams
âMounting position :Any
HTRB20I60CT HTRI20I60CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25â ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL
HTR20I60CT, HTRF20I60CT, HTRI20I60CT, HTRB20I60CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
60
Maximum RMS Voltage
VRMS
42
Maximum DC Blocking Voltage
VDC
60
Maximum Average Forward Rectified Current ( See Fig.1)
20
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
10
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
150
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
IRRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Breakdown voltage per diode
Forward Voltage (Note1)
VBR
IF=5A @TJ=25â
60(minimun)
0.38
IF=5A @TJ=125â
VF
IF=10A @TJ=25â
0.29
0.44
IF=10A @TJ=125â
0.38
Maximum DC Reverse Current @TJ=25â
IR
350
at Rated DC Bolcking Voltage @TJ=125â
90
Typical Junction Capacitance (Note2)
CJ
1013
Max
-
0.40
0.31
0.46
0.39
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
HTR20I60CT
Typ
HTRF20I60CT HTRI20I60CT
HTRB20I60CT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
V
V
V
A
A
A
â
â
UNIT
V
V
uA
mA
pF
UNIT
â/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017
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