HTRI10U100CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS

HTR10U100CT, HTRF10U100CT
HTRI10U100CT, HTRB10U100CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Ultra Low VF=0.33V at IF=1A
SCHOTTKY BARRIER RECTIFIERS
ChipSize
67
FEATURES
REVERSE VOLTAGE 100
Volts
FORWARD CURRENT _{10 Amperes}
TO-220AB
ITO-220AB
Pb
●Metal of silicon rectifier , majority carrier conduction
●Trench Schottky Technology
●Low power loss, high efficiency
HALOGEN
FREE
●High current capability, low VF
●High surge capacity
●Plastic package has UL flammability
classification 94V-0
HTR10U100CT
RoHS
COMPLIANT
HTRF10U100CT
●For use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
●Case: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
HTRB10U100CT HTRI10U100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL
HTR10U100CT, HTRF10U100CT, HTRI10U100CT,
HTRB10U100CT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
UNIT
V
Maximum RMS Voltage
VRMS
70
V
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified Current ( See Fig.1)
10
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
5
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
100
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
I_RRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Max
Breakdown voltage per diode
Forward Voltage (Note1)
V_BR
IF=1.0A @TJ=25℃
IF=1.0A @TJ=125℃
IF=2.5A @TJ=25℃
IF=2.5A @TJ=125℃
V_F
IF=5A @TJ=25℃
IF=5A @TJ=125℃
Maximum DC Reverse Current @TJ=25℃
IR
at Rated DC Bolcking Voltage @TJ=125℃
Typical Junction Capacitance (Note2)
CJ
110 (minimun)
-
0.43
0.46
0.33
0.35
0.50
0.53
0.44
0.47
0.60
0.64
0.56
0.59
70
20
307
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
HTR10U100CT HTRF10U100CT HTRI10U100CT HTRB10U100CT
V
A
A
A
℃
℃
UNIT
V
V
uA
mA
pF
UNIT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
℃/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017