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HTRI10L60CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS | |||
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HTR10L60CT, HTRF10L60CT
HTRI10L60CT, HTRB10L60CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Ultra Low VF=0.34V at IF=2.5A
SCHOTTKY BARRIER RECTIFIERS
ChipSize
50
FEATURES
REVERSE VOLTAGE 60
Volts
FORWARD CURRENT 10
Amperes
TO-220AB
ITO-220AB
Pb
âMetal of silicon rectifier , majority carrier conduction
âTrench Schottky Technology
âLow power loss, high efficiency
HALOGEN
FREE
âHigh current capability, low VF
âHigh surge capacity
âPlastic package has UL flammability
classification 94V-0
HTR10L60CT
HTRF10L60CT
RoHS
COMPLIANT
âFor use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
âCase: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
âPolarity: As marked on the body
âWeight: 0.08ounces,2.24 grams
âMounting position :Any
HTRB10L60CT HTRI10L60CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25â ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL HTR10L60CT, HTRF10L60CT, HTRI10L60CT, HTRB10L60CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
60
Maximum RMS Voltage
VRMS
42
Maximum DC Blocking Voltage
VDC
60
Maximum Average Forward Rectified Current ( See Fig.1)
10
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
5
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
50
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
IRRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Max
Breakdown voltage per diode
Forward Voltage (Note1)
VBR
IF=2.5A @TJ=25â
IF=2.5A @TJ=125â
VF
IF=5A @TJ=25â
IF=5A @TJ=125â
Maximum DC Reverse Current @TJ=25â
IR
at Rated DC Bolcking Voltage @TJ=125â
Typical Junction Capacitance (Note2)
CJ
63(minimun)
-
0.41
0.44
0.34
0.36
0.49
0.52
0.47
0.49
500
120
334
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
HTR10L60CT HTRF10L60CT HTRI10L60CT
HTRB10L60CT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
V
V
V
A
A
A
â
â
UNIT
V
V
uA
mA
pF
UNIT
â/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017
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