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HTRI10L45CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS | |||
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HTR10L45CT, HTRF10L45CT
HTRI10L45CT, HTRB10L45CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Ultra Low VF=0.32V at IF=2.5A
SCHOTTKY BARRIER RECTIFIERS
ChipSize
50
FEATURES
REVERSE VOLTAGE 45
Volts
FORWARD CURRENT 10 Amperes
TO-220AB
ITO-220AB
Pb
âMetal of silicon rectifier , majority carrier conduction
âTrench Schottky Technology
âLow power loss, high efficiency
HALOGEN
FREE
âHigh current capability, low VF
âHigh surge capacity
âPlastic package has UL flammability
classification 94V-0
HTR10L45CT
HTRF10L45CT
RoHS
COMPLIANT
âFor use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
âCase: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
âPolarity: As marked on the body
âWeight: 0.08ounces,2.24 grams
âMounting position :Any
HTRB10L45CT HTRI10L45CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25â ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL HTR10L45CT, HTRF10L45CT, HTRI10L45CT, HTRB10L45CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
45
Maximum RMS Voltage
VRMS
31
Maximum DC Blocking Voltage
VDC
45
Maximum Average Forward Rectified Current ( See Fig.1)
10
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
5
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
50
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
IRRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Breakdown voltage per diode
Forward Voltage (Note1)
VBR
IF=2.5A @TJ=25â
48(minimun)
0.40
IF=2.5A @TJ=125â
VF
IF=5A @TJ=25â
0.31
0.47
IF=5A @TJ=125â
0.43
Maximum DC Reverse Current @TJ=25â
IR
500
at Rated DC Bolcking Voltage @TJ=125â
120
Typical Junction Capacitance (Note2)
CJ
484
Max
-
0.42
0.33
0.49
0.45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
HTR10L45CT HTRF10L45CT HTRI10L45CT
HTRB10L45CT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
V
V
V
A
A
A
â
â
UNIT
V
V
uA
mA
pF
UNIT
â/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017
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