HTRF30I60CT Datasheet, PDF (1/4 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS

HTR30I60CT, HTRF30I60CT
HTRI30I60CT, HTRB30I60CT
HY ELECTRONIC (CAYMAN) LIMITED
www.hygroup.com.tw
Ultra Low VF=0.3V at IF=7.5A
SCHOTTKY BARRIER RECTIFIERS
ChipSize
FEATURES
102 I
REVERSE VOLTAGE 60
Volts
FORWARD CURRENT _{30 Amperes}
TO-220AB
ITO-220AB
Pb
●Metal of silicon rectifier , majority carrier conduction
●Trench Schottky Technology
●Low power loss, high efficiency
HALOGEN
FREE
●High current capability, low VF
●High surge capacity
●Plastic package has UL flammability
classification 94V-0
HTR30I60CT
HTRF30I60CT
RoHS
COMPLIANT
●For use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
TO-263AB
TO-262AA
converter,and polarity protection applications
MECHANICAL DATA
●Case: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
HTRB30I60CT HTRI30I60CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL
HTR30I60CT, HTRF30I60CT, HTRI30I60CT, HTRB30I60CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
60
Maximum RMS Voltage
VRMS
42
Maximum DC Blocking Voltage
VDC
60
Maximum Average Forward Rectified Current ( See Fig.1)
30
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
15
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
210
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
I_RRM
1
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Breakdown voltage per diode
Forward Voltage (Note1)
V_BR
IF=7.5A @TJ=25℃
60(minimun)
0.38
IF=7.5A @TJ=125℃
0.30
IF=15A @TJ=25℃
V_F
0.44
IF=15A @TJ=125℃
0.40
Maximum DC Reverse Current @TJ=25℃
IR
420
at Rated DC Bolcking Voltage @TJ=125℃
100
Typical Junction Capacitance (Note2)
CJ
1392
Max
-
0.40
0.32
0.46
0.41
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
HTR30I60CT HTRF30I60CT HTRI30I60CT
HTRB30I60CT
Thermal Resistance Per Diode (Note3)
RθJC
3.0
5.5
3.5
3.5
V
V
V
A
A
A
℃
℃
UNIT
V
V
uA
mA
pF
UNIT
℃/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017