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HS1A Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. High Efficient Surface Mount Rectifiers | |||
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SURFACE MOUNT
GLASS HIGH EFFICIENCY RECTIFIERS
HS1A thru HS1M
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Amperes
FEATURES
â Low cost
â Diffused junction
âUltra fast switching for high efficiency
â Low reverse leakage current
â Low forward voltage drop
â High current capability
â The plastic material carries UL recognition 94V-0
MECHANICAL DATA
âCaseï¼ Molded Plastic
âPolarity: lndicated by cathode band
âWeight: 0.002 ounces,0.064 grams
âMounting position: Any
SMA
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
.114(2.90)
.098(2.50)
.012(.305)
.006(.152)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25â ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward
I(AV)
Rectified Current
@TA=55 â
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
IFSM
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1.0A DC(Note1)
VF
Maximum DC Reverse Current
@TJ=25â
IR
at Rated DC Blocking Voltage
@TJ=100â
Maximum Reverse Recovery Time(Note 1)
Trr
Tyical Junction Capacitance (Note2)
CJ
Tyical Thermal Resistance (Note3)
RθJA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES: 1.Measured with IF=0.5A,IR=1A,IRR=0.25A.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
HS1A
50
35
50
3.Thermal resistance junction of ambient.
HS1B
100
70
100
HS1D
200
140
200
HS1G
400
280
400
1.0
HS1J
600
420
600
1.0
50
20
30
1.3
5.0
100
25
-50 to +150
-50 to +150
HS1K
800
580
800
1.7
75
10
HS1M
1000
700
1000
UNIT
V
V
V
A
A
V
uA
nS
pF
â/W
â
â
~ 101 ~
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