GBU8005C Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

SILICON BRIDGE RECTIFIERS
FEATURES
●Surge overload rating -200 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique
●Plastic material has U/L
flammability classification 94V-0
●Mounting postition:Any
GBU8005C thru GBU810C
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 8.0 Amperes
.752(19.1)
.720(18.3)
.079(2.0)
.063(1.6)
GBU-C
.874(22.2)
.860(21.8)
.156(3.95)
3.2*3.2 ^.148(3.75)
CHAMFER
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.126(3.2)
.114(2.9)
.080(2.03)
.065(1.65)
.210 .210 .210
.190 .190 .190
(5.3) (5.3) (5.3)
(4.8) (4.8) (4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
GBU
8005C
50
GBU
801C
100
GBU
802C
200
GBU
804C
400
GBU
806C
600
GBU
808C
800
GBU
810C
1000
Maximum RMS Voltage
VRMS
30
70
140
280
420
560
700
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TJ=25℃
@ TJ=125℃
I²t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
VDC
50
100
200
400
600
800
1000
8.0
I(AV)
3.2
IFSM
200
VF
1.0
10
IR
500
I²t
166
CJ
60
Typical Thermal Resistance (Note2)
Operating Temperature Range
RθJC
TJ
2.2
-55 to +125
Storage Temperature Range
TSTG
-55 to +150
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
UNIT
V
V
V
A
A
V
uA
A²s
pF
℃/W
℃
℃
~ 285 ~