GBU6005C Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

SILICON BRIDGE RECTIFIERS
FEATURES
●Surge overload rating -175 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique
●Plastic material has U/L
flammability classification 94V-0
●Mounting postition:Any
GBU6005C thru GBU610C
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 6.0 Amperes
.752(19.1)
.720(18.3)
.079(2.0)
.063(1.6)
GBU-C
.874(22.2)
.860(21.8)
.156(3.95)
3.2*3.2 ^.148(3.75)
CHAMFER
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.126(3.2)
.114(2.9)
.080(2.03)
.065(1.65)
.210 .210 .210
.190 .190 .190
(5.3) (5.3) (5.3)
(4.8) (4.8) (4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
GBU
6005C
50
GBU
601C
100
GBU
602C
200
GBU
604C
400
GBU
606C
600
GBU
608C
800
GBU
610C
1000
Maximum RMS Voltage
VRMS
30
70
140
280
420
560
700
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TJ=25℃
@ TJ=125℃
I²t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
VDC
50
100
200
400
600
800
1000
6.0
I(AV)
2.8
IFSM
175
VF
IR
I²t
CJ
RθJC
TJ
TSTG
1.0
10.0
500
127
50
2.2
-55 to +125
-55 to +150
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
UNIT
V
V
V
A
A
V
uA
A²s
pF
℃/W
℃
℃
~ 283 ~