EM513 Datasheet, PDF (1/2 Pages) Semikron International – Standard silicon rectifier diodes

EM513 thru EM518
HIGH VOLTAGE
PLASTIC RECTIFIER
REVERSE VOLTAGE - 1600 to 2000 Volts
FORWARD CURRENT - 1.0 Amperes
FEATURES
●Molded case feature for auto insertion
● High current capability
● Low leakage current
● High surge capability
● High temperature soldering guaranteed:
250℃/10sec/0.375" (9.5mm) lead length
at 5 lbs tension
DO- 41
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA
MECHANICAL DATA
●Terminal: Plated axial leads solderable per
MIL -STD 202E,method 208C
●Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy.
●Polarity: Color band denotes cathode
●Weight: 0.012 ounces , 0.34 grams
●Mounting position:Any
.205(5.2)
MAX
1.0(25.4)
MIN.
.107(2.7)
.080(2.0) ^DIA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave, 60H_Z, resistive or inductive load.
For capacitive load,derate current by 20%
CHARACTERISTICS
SYMBOL
EM513
EM516
Maximum Recurrent Peak Reverse Voltage
VRRM
1600
1800
Maximum RMS Voltage
VRMS
1120
1260
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
I(AV)
0.375" (9.5mm) Lead Lengths at
TA=75℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
Super Imposed on Rated Load
Maximum Instantaneous Forward Voltage
at Rated Formward Current
@ T_A=25℃
VF
Maximum DC Reverse Current
@T_A=25℃
IR
at Rated DC Blocking Voltage
@TA=100℃
Typical junction Capacitance (Note1 )
C_J
Typical Thermal Resistance (Note 2)
RθJA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTE:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
1600
1800
1.0
30
1.1
5.0
50.0
10
50
-50 to+175
-50 to+175
2.Thermal Resistance from Junction of ambient at.375" (9.5mm) lead lengths. P.C.board mounted.
EM518
2000
1400
2000
UNIT
V
V
V
A
A
V
uA
pF
℃/W
℃
℃
~ 41 ~