DB3 Datasheet, PDF (1/2 Pages) STMicroelectronics – TRIGGER DIODES

DB3,DB4,DB6
SILICON
BIDIRECTIONAL DIACS
POWER DISSIPATION 150 mW
FEATURES
DO- 41
●Three way layer two terminal, axial lead ,
hermetically sealed diacs are designed specifically for
triggering thyrisitors .The demonstrate low breakover current.
The breakover symmetry is within three volts(DB3,DB4)
or four volts(DB6).These diacs are intended for
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
use in thyrisitors phase control.,circuits for lamp
dimming universal motor speed control and heat
control
●This diocle is also avaiable in the DO-41case.
.205(5.2)
MAX
..100870((22..70))DIA
DO-35(GLASS)
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079 _MAX
(2.0)
1.0(25.4)
MIN
1.083(27.5)
MIN
ABSOLUTE RATINGS
Dimensions in inches and (millimeters)
PARAMETERS
Power Dissipation on Printed
Cir cuit(L=10mm)
TA=50℃
Repetitive Peak on-state
Tp=10uS
Current
f=100HZ
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
Pc
ITRM
TSTG/TJ
VALUE
DB3
DB4
DB6
150
2.0
-44 to+125/-40 to+110
PAPRAMETERS
Breakover Voltage*
Breakover Voltage Symmetry
Dynamic Breakover Voltage
Output Voltage*
Breakover Current*
Rise Time*
Leakage Current*
SYMBOLS
VBO
1+VBOI-
1-VBOI
1±△V1
VO
IBO
tr
IB
TEST CONDITIONS
Min
C=22nf**
See Diagram 1
Typ
Max
C=22nf**
Max
See Diagram 1
△I=(IBO to IF=10mA)
Min
See FIG 1
See FIG 2
Min
C=22nf**
Max
See FIG 3
Typ
IB=0.5 VBO MAX
Max
See FIG 3
VALUE
DB3
DB4
DB6
28
35
56
32
40
60
36
45
70
±3
5
5
100
1.5
10
NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
~ 211 ~
UNITS
mW
A
℃
UNITS
V
V
V
V
uA
uS
uA