AA16-9DIL18 Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – Avalanche Photodiode Array

AA16-9 DIL18
16 Element
Avalanche Photodiode Array
Special characteristics:
quantum efficiency >80% at λ 760-910 nm
high speed, low noise
good uniformity between elements
low cross talk
Parameters:
no. of Elements
Active Area / Element
[µm]
Gap / Separation
[µm]
Pitch
[µm]
Spectral Range
Spectral Responsivity ¹⁾
(at 905 nm, M = 100)
Max. Gain
(Ipo= 1nA)
Dark Current ¹⁾
(M = 100)
Capacitance ¹⁾/Element
(M=100)
Breakdown Voltage U_BR
(at I_D = 2 µA)
Rise Time
at 905 nm, 50 Ω
Cross-talk
(at 905 nm)
Photo Current Uniformity
(at M= 50)
Dark Current Uniformity
(at M= 50)
Operating Temperature
Storage Temperature
AA16-9 DIL18
16
648 * 208
112
320
450 … 1050
min. 55 A/W
typ. 60 A/W
typ. 100
typ. 5 nA
typ. 2 pF
100 … 300 V
typ. 2 ns
typ. 50 dB
± 20 %
typ. ± 5 %
± 20 %
typ. ± 5 %
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 100 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
www.silicon-sensor.com
Version: 06-03-03
Specification before: AD-LA-16-9-DIL 18
Order Number: 500038
Package DIL18:
18 17 16 15 14 13 12 11 10
1 2 34 56 78 9
22.8
1.5
window
0.7
2.54
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Function
Element 1
Element 3
Element 5
Element 7
Element 9
Element 11
Element 13
Element 15
Guard Ring
Element 16
Element 14
Element 12
Element 10
Common Anode
Element 8
Element 6
Element 4
Element 2
www.pacific-sensor.com