2WO Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

SILICON BRIDGE RECTIFIERS
FEATURES
●Surge overload rating -60 amperes peak
●Ideal for printed circuit board
●Reliable low cost construction utilizing molded plastic
technique results in expensive product
●Mounting position:Any
●Lead: Sliver plated copper lead
2WO/2WOM SERIES
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 2.0 Amperes
.220(5.6)
.200(5.1)
WOB
.366(9.3)
.350(8.9)
.181(4.6)
.150(3.8)
WOBM
.386(9.8)
.354(9.0)
1.1
(27.9)
MIN
1.0
(25.4)
MIN
1.1
(27.9)
MIN
1.0
(25.4)
MIN
POS.
LEAD
.032(0.81)
.028(0.71)
POS.
LEAD
.032(0.81)
.028(0.71)
.220(5.6)
.220(5.6)
.180(4.6)
.180(4.6)
.220(5.6)
.180(4.6)
SPACING
.220(5.6)
.180(4.6)
SPACING
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
2W005 2W01
SYMBOL
2W005M 2W01M
2W 02
2W 02M
2W 04
2W 04M
2W 06
2W 06M
2W 08
2W 08M
2W 10
2W 10M
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″（9.5mm) Lead Lengths
@TA=25 ℃
Peak Forward Surge Current ,
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
I²t Rating for Fusing (t＜8.3ms)
Maximum Forward Voltage Drop
Per Element at 2.0A Peak
Maximum DC Reverse Current at Rated
DC Blocking Voltage
TJ=25℃
TJ=100℃
Typical Junction Capacitance Per Element (Note1)
Operating Temperature Range
Storage Temperature Range
VDC
50
100
200
400
600
800
1000
V
I(AV)
2.0
A
IFSM
60
A
I²t
15.0
A²s
VF
1.1
V
IR
10.0
μA
1.0
mA
CJ
30
pF
TJ
-55 to +125
℃
TSTG
-55 to +150
℃
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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