2N7002KDW Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

60V ESD Protected
N-Channel Enhancement Mode MOSFET
FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit,
Battery Operated System, Drivers : Lamps,
Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC
MECHANIAL DATA
• Case : SOT-363 Molded Plastic
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Marking : 702
2N7002KDW
R_DS(ON), V_GS@10V, I_DS@500mA=2Ω
R_DS(ON), V_GS@4.5V, I_DS@200mA=3Ω
SOT-363
Dimensions in inches (millimeters)
Maximum Rating and Thermal Characteristics ( T_C=25^OC unless otherwise noted )
Parameter
S ymb o l
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=2 5 ^OC
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
T_C=2 5 ^OC
T_C=10 0 ^OC
Junction to Ambient Thermal Resistance ( PCB Mounted )²⁾
V_DS
V _GS
I_D
I_{D M}
P_D
R_θJA
O p e r a t i ng J unc ti o n a nd S to r a g e Te mp e r a t ur e Ra ng e
Note : 1. Maximum DC Current Limit by the Package
2. Surface Mounted on FR4 Board, t<5sec
T _J , T _{S TG}
Va lue
60
+20
11 5
850
0.2
0.08
625
-55 to +150
Uni ts
V
V
mA
mA
W
O_{C /W}
O_C
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : OCT. 2011
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