1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

1N914
FAST SWITCHING DIODE
FEATURES
● High reliability
● High conductance
● Fast switching speed (trr≤4ns)
APPLICATIONS
● For general purpose swiching applications
DO - 35
1.083(27.5)
MIN
.020
(0.51)
TYP.
CONSTRUCTION
● Silicon epitaxial planar
.150(3.8)
MAX
.079
(2.0)
MAX
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATING (TJ=25℃)
Parameter
Test Conditions
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward current
Average rectified current
Half wave rectification with resistive
load and f>50MHz
Non repetitive peak forward surge current
Power dissipation
t=1s
t=1us
I=4mm TL=25℃
Storge temperature range
Symbol
VRM
VRRM
VRW M
VR
VR(RMS)
IF
IFAV
IFSM
IFSM
Pd
TsTg
MAXIMUM THERMAL RESISTANCE
Parameter
Junction ambient
(TJ=25℃)
Test Conditions
I=4mm TL=constant
Symbol
RthJA
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Peak reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
TJ=25℃
Test Conditions
IF=10mA
VR=20V
VR=20V, Tj=150℃
VR=75V
IR=100uA
VR=0, f=1MHZ
IF=10mA to IR=1mA,VR=6V,RL=100Ω
Symbol
VF
IR
IR
IR
VR
CD
trr
Value
100
75
75
75
53
300
200
1
4
500
-55 ~ +175
Value
300
Min
Typ
100
Unit
V
V
V
V
V
mA
mA
A
A
mW
℃
Unit
K/W
Max
Unit
1
V
25
nA
50
uA
5
uA
V
4
pF
4
ns
~ 419 ~