1N4151 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4151
HIGH-SPEED SWITCHING DIODE
FEATURES
● High reliability
● Small surface mounting type
APPLICATIONS
● High speed switch and general purpose use in
computer and industrial applications
CONSTRUCTION
● Silicon epitaxial planar
DO - 35
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079
(2.0)
MAX
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
(TJ=25℃)
Parameter
Repetitive peak reverse voltage
Reverse Vltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storge temperature range
Test Conditions
Type
tp=1uS
VR=0
MAXIMUM THERMAL RESISTANCE (TJ=25℃)
Parameter
Test Conditions
Junction ambient
On PC board 50mm*50mm*1.6mm
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
TJ=25℃
Test Conditions
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
VR=50V
VR=50V, Tj=150℃
VR=0, f=1MHZ, VHF=50mA
IF= IR=10…100mA,RL=100Ω
Symbol
Value
Unit
VRRM
100
V
VR
75
V
IFSM
75
A
IFRM
IF
75
mA
IFAV
53
mA
PV
300
mW
TJ
℃
TsTg
-65 ~ +175
℃
Symbol
Value
Unit
RthJA
500
K/W
Symbol Min
Typ
Max
Unit
VF
0.54
0.62
V
VF
0.66
0.74
V
VF
0.76
0.86
V
VF
0.82
0.92
V
VF
0.87
1.0
V
IR
100
nA
IR
100
uA
CD
2.5
pF
trr
4
ns
~ 427 ~