1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

1N4150
HIGH-SPEED SWITCHING DIODE
FEATURES
● High reliability
● High forward current capability
APPLICATIONS
● High speed switch and general purpose use in
computer and industrial applications
CONSTRUCTION
● Silicon epitaxial planar
DO - 35
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079
(2.0)
MAX
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
(TJ=25℃)
Parameter
Repetitive peak reverse voltage
Reverse Vltage
Peak forward surge current
Forward current
Average forward current
Power dissipation
Junction temperature
Storge temperature range
Test Conditions
Type
tp=1uS
VR=0
MAXIMUM THERMAL RESISTANCE (TJ=25℃)
Parameter
Test Conditions
Junction ambient
On PC board 50mm*50mm*1.6mm
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
TJ=25℃
Test Conditions
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
VR=50V
VR=50V, Tj=150℃
VR=0, f=1MHZ, VHF=50mA
IF= IR=10…100mA,RL=100Ω
Symbol
Value
Unit
VRRM
100
V
VR
75
V
IFSM
75
A
IF
75
mA
IFAV
53
mA
PV
300
mW
TJ
℃
TsTg
-65 ~ +175
℃
Symbol
Value
Unit
RthJA
500
K/W
Symbol Min
Typ
Max
Unit
VF
0.54
0.62
V
VF
0.66
0.74
V
VF
0.76
0.86
V
VF
0.82
0.92
V
VF
0.87
1.0
V
IR
100
nA
IR
100
uA
CD
2.5
pF
trr
4
ns
~ 423 ~