1N4148 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

1N4148
SMALL SIGNAL
SWITCHING DIODE
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
● These diodes are also available in glass case
DO-34,Mini-MELF
MECHANICAL DATA
●Case: DO-35 glass case
●Polarity: Color band denotes cathode
●Weight: 0.004 ounces , 0.13 grams
REVERSE VOLTAGE - 75 Volts
FORWARD CURRENT - 0.15Amperes
D0 - 35
1.083(27.5)
MIN
.020
(0.51) ^TYP.
.150(3.8)
MAX
.079 _MAX
(2.0)
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
1N4148
Reverse Vltage
VR
75
Peak Reverse Voltage
VRM
100
Average Forward Rectified Current
Half Wave Rectification with Resist .load
IO
150
at T_amb=25℃ and f≧50HZ
Forward Surge Current at t＜1s and TJ=25℃
Power Dissipation at Tamb=25℃
IFSM
PTOT
500
500⁽¹⁾
Junction Temperature
TJ
175
Storage Temperature Range
TSTG
ï¹£65 toï¹¢175
NOTE:(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
Forward Voltage at I_F=10mA
Leakage Current
at V_R=20V
at V_R=75V
at V_R=20V TJ=150℃
Capacitance at V_F=V_R=0V
Voltage Rise when Switching ON
tested with 50mA pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
VF
ï¹£
ï¹£
1
I_R
-
ï¹£
25
I_R
ï¹£
ï¹£
5
I_R
ï¹£
ï¹£
50
Ctot
ï¹£
ï¹£
4
V_fr
ï¹£
-
2.5
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient
Rectification Effciency at 100MHZ VRF=2V
t_rr
ï¹£
ï¹£
RθJA
ï¹£
ï¹£
ηV
0.45
ï¹£
4
350⁽¹⁾
ï¹£
NOTE:(1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
~ 413 ~
UNIT
V
V
mA
mA
mW
℃
℃
UNIT
V
uA
uA
uA
pF
v
ns
K/W
ï¹£