1N4001S_17 Datasheet, PDF (1/3 Pages) HY ELECTRONIC CORP. – PLASTIC SILICON RECTIFIERS

PLASTIC SILICON RECTIFIERS
FEATURES
●Low cost
●Diffused junction
●Low forward voltage drop
●Low reverse leakage current
●High current capability
●The plastic material carries UL recognition 94V-0
1N4001S thru 1N4007S
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
A-405
1.0(25.4)
MIN.
.028(0.7)
.020(0.5)
DIA.
MECHANICAL DATA
●Case: JEDEC A-405 molded plastic
●Polarity: Color band denotes cathode
●Weight: 0.008 ounces , 0.22 grams
●Mounting position :Any
.205(5.2)
.165(4.2)
1.0(25.4)
MIN.
.107(2.7)
.080(2.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=75 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Blocking Voltage
@TJ=100℃
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
SYMBOL 1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
VRRM
50
100
200
400
600
800
1000
VRMS
35
70
140
280
420
560
700
VDC
50
100
200
400
600
800
1000
I(AV)
1.0
IFSM
VF
IR
CJ
RθJC
TJ
TSTG
30
1.0
5.0
50
15
26
-55 to +150
-55 to +150
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to case
3.The typical data above is for reference only(典型值仅供参考).
UNIT
V
V
V
A
A
V
μA
pF
℃/W
℃
℃
Rev. 7, 13-Mar-2017