1N4001 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS
FEATURES
●Low cost
●Diffused junction
●Low forward voltage drop
●Low reverse leakage current
●High current capability
●The plastic material carries UL recognition 94V-0
1N4001 thru 1N4007
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Amperes
DO- 41
1.0(25.4)
MIN.
.034(0.9)
.028(0.7) ^DIA
MECHANICAL DATA
●Case: JEDEC DO-41 molded plastic
●Polarity: Color band denotes cathode
●Weight: 0.012 ounces , 0.34 grams
●Mounting position :Any
.205(5.2)
MAX
1.0(25.4)
MIN.
.107(2.7)
.080(2.0)
DIA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
VRRM
50
100
200
400
600
800
1000
VRMS
35
70
140
280
420
560
700
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=75 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
@TJ=100℃
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
VDC
50
100
200
400
600
800
1000
I(AV)
1.0
IFSM
VF
IR
CJ
RθJC
TJ
TSTG
30
1.1
5.0
50
15
26
-55 to +125
-55 to +125
NOTE:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction of ambient
UNIT
V
V
V
A
A
V
uA
pF
℃/W
℃
℃
~3~