HWS541_V1 Datasheet, PDF (2/2 Pages) Hexawave, Inc – GaAs 2-6 GHz SPDT Switch

HWS541
GaAs 2-6 GHz SPDT Switch
May 2015 V1
Typical Performance Data with 8pF
Capacitors @ +25°C
Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
-40
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency(GHz)
Insertion Loss vs. Frequency
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency(GHz)
Isolation vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
-40
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency(GHz)
Absolute Maximum Ratings
Parameter
Absolute Maximum
RF Input Power
+33 dBm @ +3V
Control Voltage
+6V
Operating Temperature
-40°C to +85°C
Storage Temperature
Electrostatic Discharge
Machine Model
-65°C to +150°C
Class M1
Pin Out (Top View)
1
C_B
GND 2
3
C_B
C_A
6
VC1
5
RFC
C_B
4
VC2
C_A
Note:
1. DC blocking capacitors C_B=8pF are required on all
RF ports.
2. RF by-pass capacitors C_A=8pF.
3. Exposed pad in the bottom must be connected to
ground by via holes.
Logic Table for Switch On-Path
VC1
VC2
RFC-RF1 RFC-RF2
1
0
Off
On
0
1
On
Off
‘1’ = +1.8V to +5V
‘0’ = 0V to +0.2V
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL [phone] FAX [phone]
http://www.hw.com.tw All specifications are subject to change without notice.