HWS503 Datasheet, PDF (2/2 Pages) Hexawave, Inc – GaAs 0.5-6GHz DPDT Switch

HWS503
GaAs 0.5-6GHz DPDT Switch
January 2009 V1
Typical Performance Data with 8pF
Capacitors @ +25°C
Insertion loss vs. Frequency
0
-0.3
-0.6
-0.9
-1.2
2 2.5 3 3.5 4 4.5 5 5.5 6
Frequency (GHz)
Isolation vs. Frequency
-5
-10
-15
-20
-25
-30
2 2.5 3 3.5 4 4.5 5 5.5 6
Frequency (GHz)
Input return loss vs. Frequency
-5
-10
-15
-20
-25
-30
2 2.5 3 3.5 4 4.5 5 5.5 6
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Maximum
RF Input Power
Control Voltage
Operating Temperature
Storage Temperature
Electrostatic Discharge
Machine Model
+34dBm @ +3V
+6V
-40°C to +85°C
-65°C to +150°C
Class M1
Pin Out
ANT2
VC2
OUT2
(RX)
1
C_B
2
3
C_B
6
C_B
5
4
C_B
ANT1
VC1
OUT1
(TX)
Note:
1. DC blocking capacitors C_B=8pF are required on all
RF ports.
2. Exposed pad in the bottom must be connected to
ground by via holes.
3. TX and RX ports can be used interchangeably.
Truth Table
State VC1 VC2 ANT1 ANT2
1
0
1
TX
RX
2
1
0
RX
TX
‘1’ = +3V to +5V
‘0’ = 0V to +0.2V
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.