HWS420_V3_15 Datasheet, PDF (2/2 Pages) Vitesse Semiconductor Corporation – GaAs DC-6 GHz DPDT Switch

Typical Performance Data with 8pF
Capacitors @ +25°C
Insertion Loss vs Frequency
-0.2
-0.4
-0.6
HWS420
GaAs DC-6 GHz DPDT Switch
May 2011 V3
Absolute Maximum Ratings
Parameter
RF Input Power
Control Voltage
Absolute Maximum
+34 dBm @ +3V
+6V
Operating Temperature
Storage Temperature
-40°C to +85°C
-65°C to +150°C
-0.8
Pin Out (Top View)
-1.0
-1.2
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency(GHz)
Isolation vs Frequency
-5
-10
-15
-20
ISO1
ISO2
12 11 10
V C1
1
GND ²
V C2
3
9
VC4
8 _GND
7
VC3
4 56
-25
-30
-35
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency(GHz)
Note: ISO1 for ANT1-ANT2 and TX-RX
ISO2 for ANT1-TX, ANT1-RX, ANT2-TX, and ANT2-RX
Return Loss vs Frequency
-10
-15
-20
-25
Note:
1. DC blocking capacitors C_B=8pF are required on all
RF ports.
2. Exposed pad in the bottom must be connected to
ground by via holes.
3. TX and RX ports can be used interchangeably.
Logic Table for Switch On-Path
VC1 VC2 VC3 VC4
On-Path
1
0
0
0
ANT2-RX
0
1
0
0
ANT1 -TX
-30
0
0
1
0
ANT1-RX
-35
0
0
0
1
ANT2 -TX
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
‘1’ = +3V to +5V
Frequency(GHz)
‘0’ = 0V to +0.2V
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL [phone] FAX [phone]
http://www.hw.com.tw All specifications are subject to change without notice.