HWL36YRA Datasheet, PDF (2/4 Pages) Hexawave, Inc – L-Band GaAs Power FET

Typical Performance at 25_°C
HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
35
30
25
20
15
Gain
10
5
0
0
4
PAE (%)
40
30
Po
Gain
20
Eff
10
0
8
12
16
20
24 ^{Pin (dBm)}
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
PAE (%)
70
35
30
25
20
15
Gain
10
5
60
50
Po
40
Gain
30
Eff
20
10
0
0
4
8
12
16
20
24
28 ^{Pin (dBm)}
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.