HWC27NC_V1_15 Datasheet, PDF (2/2 Pages) Hexawave, Inc – C-Band Power Non-Via Hole Chip

HWC27NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5I_DSS
(GHz)
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
lS11l
0.845
0.839
0.839
0.837
0.834
0.832
0.828
0.827
0.827
0.827
0.829
0.827
0.830
0.828
0.827
0.827
0.825
∠^ANG
-115.62
-126.96
-135.39
-141.73
-147.23
-151.60
-155.23
-158.30
-161.00
-163.08
-165.07
-167.18
-169.65
-171.56
-173.63
-175.28
-176.45
lS21l
4.702
3.921
3.336
2.896
2.551
2.278
2.052
1.879
1.720
1.588
1.475
1.370
1.279
1.204
1.136
1.077
1.019
∠^ANG
103.80
95.65
88.67
82.57
77.03
72.18
67.94
63.92
59.95
56.32
52.75
49.09
45.84
42.82
39.47
36.43
33.25
lS12l
0.028
0.032
0.037
0.042
0.045
0.048
0.052
0.056
0.061
0.066
0.070
0.077
0.083
0.089
0.096
0.104
0.110
∠^ANG
71.07
71.05
72.49
72.98
74.32
76.58
77.92
80.91
83.84
85.29
86.33
87.32
89.28
89.60
89.96
90.23
91.35
lS22l
0.236
0.246
0.257
0.275
0.291
0.309
0.327
0.336
0.352
0.365
0.384
0.399
0.418
0.440
0.456
0.467
0.475
∠^ANG
-49.89
-55.54
-62.80
-68.12
-73.17
-79.08
-82.34
-85.76
-89.00
-91.68
-94.59
-97.11
-100.45
-102.74
-105.73
-107.27
-111.08
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.