HWL34YRF_V1_15 Datasheet, PDF (1/3 Pages) Hexawave, Inc – L-Band GaAs Power FET

Features
• ^{Low Cost GaAs Power FET}
• ^{Class A or Class AB Operation}
• ^{Greater than 14.5 dB Gain}
• ^{5V to 10V Operation}
Description
The HWL34YRF is a Power GaAs FET designed for
various L-band & S-band applications. It is
presently offered in low cost ceramic package.
Absolute Maximum Ratings
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D Drain Current
I_G Gate Current
T_CH Channel Temperature
T_STG Storage Temperature
P_T* Power Dissipation
* _{mounted on an infinite heat sink.}
+15V
-5V
I_DSS
6mA
175_°C
-65 to +175_°C
12W
HWL34YRF
L-Band GaAs Power FET
Autumn 2002 V1
RF Package (Ceramic)
Outline Dimensions
Electrical Specifications (TA=25_°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
I_DSS
Saturated Current at V_DS=3V, V_GS=0V
V_P
Pinch-off Voltage at V_DS=3V, I_D=60mA
gm
Transconductance at V_DS=3V, I_D=600mA
R_th
Thermal Resistance, Channel to case*
P_1dB
Power Output at Test Points
V_DS=10V, I_D=0.5I_DSS
G_1dB
Gain at 1dB Compression Point
V_DS=10V, I_D=0.5I_DSS
PAE
Power-Added Efficiency (P_out = P_1dB)
V_DS=10V, I_D=0.5I_DSS
* Device mounted on an infinite heat sink.
Units
mA
V
mS
°^C/W
dBm
dB
%
Min.
900
-3.5
-
-
33
13.5
35
Typ.
1200
-2.0
700
9
34
14.5
45
Max.
1600
-1.5
-
12
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.