HWL34NC Datasheet, PDF (1/2 Pages) Hexawave, Inc – L-Band Power FET Non-Via Hole Chip

• ^{14.5 dB Typical Gain at 2.4 GHz}
• ^{5V to 10V Operation}
Description
HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Outline Dimensions
1525.0
1392.5
9
The HWL34NC is a power GaAs FET designed for
1235.0
1
5
various L-band & S-band applications.
1077.5
10
Absolute Maximum Ratings
V_DS Drain to Source Voltage +15V
V_GS Gate to Source Voltage -5V
920.0
2
6
762.5
11
605.0
3
7
I_D
Drain Current
I_DSS
447.5
12
I_G
Gate Current
6mA
290.0
4
8
T_CH Channel Temperature 175_°C
132.5
13
T_STG Storage Temperature
-65 to +175_°C
0.0
P_T*
Power Dissipation
12W
0.0
444.5
* mounted on an infinite heat sink
75.5
524.0
Units: µm
Thickness: 100 ±5
Chip size ±50
Electrical Specifications (TA=25_°C) f = 2.4 GHz for aBlloRndFPTaedssts1-4 (Gate):
Bond Pads 5-8 (Drain):
100 x 100
100 x 100
Symbol
Parameters & Conditions
UnBitosnd PadsM9-i1n3. (SourceT):yp1. 00 x 100Max.
I_DSS
Saturated Current at V_DS=3V, V_GS=0V
mA
900
1200
1600
V_P
Pinch-off Voltage at V_DS=3V, I_D=60mA
V
-3.5
-2.0
-1.5
gm
Transconductance at V_DS=3V, I_D=600mA
mS
-
700
-
P_1dB
G_1dB
PAE
Power Output at Test Points
V_DS=10V, I_D=0.5 I_DSS
Gain at 1dB Compression Point
V_DS=10V, I_D=0.5 I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=10V, I_D=0.5 I_DSS
dBm
33
34
-
dB
12.5
13.5
-
%
25
30
-
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5I_DSS
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.