HWL27NC Datasheet, PDF (1/2 Pages) Hexawave, Inc – L-Band Power FET Via Hole Chip

Features
• ^{Low Cost GaAs Power FET}
• ^{Class A or Class AB Operation}
• ^{17 dB Typical Gain at 2.4 GHz}
• ^{5V to 10V Operation}
HWL27NC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Outline Dimensions
650
Source
Description
435
1
3
The HWL27NC is a medium power GaAs FET
designed for various L-band & S-band applications.
Absolute Maximum Ratings
V_DS
V_GS
I_D
I_G
T_CH
T_STG
P_T*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I_DSS
2mA
175_°C
-65 to +175_°C
3.5W
* mounted on an infinite heat sink
215
2
4
Source
0.0
0.0 58.5
344.5 400
Unit: µm
Thickness: 100 ± 5
Chip size ± 50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
60 x 60
60 x 60
Electrical Specifications (TA=25_°C) f = 2.4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
I_DSS
Saturated Current at V_DS=3V, V_GS=0V
mA
300
400
600
V_P
Pinch-off Voltage at V_DS=3V, I_D=20mA
V
-3.5
-2.0
-1.5
gm
Transconductance at V_DS=3V, I_D=200mA
mS
-
250
-
P_1dB
G_1dB
PAE
Power Output at Test Points
V_DS=10V, I_D=0.5 I_DSS
Gain at 1dB Compression Point
V_DS=10V, I_D=0.5 I_DSS
Power-Added Efficiency (P_OUT = P_1dB)
V_DS=10V, I_D=0.5 I_DSS
dBm
28
29
-
dB
15
16
-
%
30
40
-
Small Signal Common Source Scattering Parameters
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL [phone] FAX [phone]
http://www.hw.com.tw Email: [e-mail] All specifications are subject to change without notice.