HVV1214-100 Datasheet, PDF (1/5 Pages) HVVi Semiconductors, Inc. – L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
TM
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
For Ground Based Radar Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE FREQUENCY VDD
(MHz)
(V)
IDQ Power GAIN
(mA)
(W)
(dB)
η
IRL VSWR
(%)
(dB)
Class AB
1400
50
100
120
20
45
-8 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 200µs and pulse period = 2ms.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology
produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching
with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1214-100
Demo Kit Part Number: HVV1214-100-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
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