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GS81302Q10GE-318I Datasheet, PDF (14/28 Pages) GSI Technology – 144Mb SigmaQuad-II+TM Burst of 2 SRAM
GS81302Q07/10/19/37E-318/300/250/200
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
VOH1
VDDQ/2 – 0.12
Output Low Voltage
VOL1
VDDQ/2 – 0.12
Output High Voltage
VOH2
VDDQ – 0.2
Output Low Voltage
VOL2
Vss
Notes:
1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175 RQ  350
2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175  RQ 350.
3. Parameter tested with RQ = 250 and VDDQ = 1.5 V
4. 0RQ  
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Max.
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
0.2
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Operating Currents
-318
-300
-250
-200
Parameter
Symbol
Test Conditions
0
–40
0
–40
0
–40
0
–40
to
to
to
to
to
to
to
to
70°C
85°C
70°C 85°C 70°C 85°C 70°C 85°C
Operating Current
(x36): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1440 mA 1450 mA
Operating Current
(x18): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Operating Current
(x9): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Operating Current
(x8): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Standby Current
(NOP): DDR
Device deselected,
ISB1
IOUT = 0 mA, f = Max,
310 mA 320 mA
All Inputs 0.2 V or VDD – 0.2 V
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
1330 mA 1340 mA
1250 mA 1260 mA
1250 mA 1260 mA
1250 mA 1260 mA
295 mA 305 mA
1130 mA
1060 mA
1060 mA
1060 mA
275 mA
1140 mA 930 mA
1070 mA 875 mA
1070 mA 875 mA
1070 mA 875 mA
285 mA 255 mA
940 mA
885 mA
885 mA
885 mA
265 mA
Notes
2, 3
2, 3
2, 3
2, 3
2, 4
Rev: 1.02f 8/2017
14/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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