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| HFP830 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP830
â Electrical Characteristicsï¼Ta=25â unless otherwise specifiedï¼
Symbol
Items
Min. Typ. Max. Unit
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage 500
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate â Body Leakage
On Characteristics
V ID=250µA ,VGS=0V
25 µA VDS =500V, VGS=0V
250 µA VDS=400V, VGS=0V,Tj=125â
±100 nA VGS= ±20V , VDS =0V
VGS(TH)
Gate Threshold Voltage
2.0
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
2.5
Dynamic Characteristics and Switching Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
4.0 V VDS = VGS , ID=250µA
1.5 ⦠VGS=10V, ID=2.5A
S VDS=40V, ID=2.5A
800 pF
200
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
60 pF
td(on)
Turn - On Delay Time
30 nS
tr
td(off)
Rise Time
Turn - Off Delay Time
30 nS VDD = 200 V, ID = 2.5Apk
55 nS RG= 15 â¦
tf
Fall Time
30 nS
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
22
nC
12
nC
VDS=0.8VDSS, ID=4.5A,
VGS = 10 V
10
nC
Drain-Source Diode Characteristics and Maximun Ratings
IS
Continuous SourceâDrain Diode
Forward Current
ISM
Pulsed Drain-Source Diode
Forward Current
VSD
SourceâDrain Diode Forward
OnâVoltage
4.5 A
18 A
1.5 V IS=4.5A,VGS=0
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