HFP5N80 Datasheet, PDF (2/6 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Shantou Huashan Electronic Devices Co.,Ltd.
HFP5N80
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
Min. Typ.
800
I_DSS Zero Gate Voltage Drain Current
I_GSS Gate – Body Leakage
On Characteristics
V_GS(th) Gate Threshold Voltage
3.0
R_DS(on) Static Drain-Source On-Resistance
2.0
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
950
Coss ^{Output Capacitance}
95
Crss ^{Reverse Transfer Capacitance}
11
t_d(on) Turn - On Delay Time
22
tr Rise Time
60
t_d(off) Turn - Off Delay Time
55
t_f
Fall Time
40
Qg Total Gate Charge
25
Qgs Gate–Source Charge
5.6
Qgd Gate–Drain Charge
12
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Continuous Source–Drain Diode
Forward Current
I_SM
Pulsed Drain-Source Diode
Forward Current
V_SD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
V
10 μA
100 μA
±100 nA
I_D=250μA ,V_GS=0V
V_DS =800V, V_GS=0V
V_DS =640V, V_GS=0V,Tj=125℃
V_GS= ±30V , V_DS =0V
5.0 V V_DS = V_GS , ID=250μA
2.6 Ω V_GS=10V, ID=2.4A
1250
125
15
55
130
120
90
33
pF
V_DS = 25 V, V_GS = 0V,
pF _{f = 1.0 MHz}
pF
nS
nS ^{VDS = 400V, ID=4.8A,}
R_G= 25 Ω
nS _{(Note 4,5)}
nS
nC
nC
V_DS=640V, ID=4.8A,
V_GS = 10 V (Note 4,5)
nC
4.8 A
19.2 A
1.4
V ^{IS=4.8A,VGS=0}
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=48mH,I_AS=4.8A, V_DD=50V, R_G=25 Ω ,Starting T_J=25℃
3. I_SD≤4.8A, di/dt≤200A/μS,V_DD≤BVDSS, Starting T_J=25℃
4. Pulse Test: Pulse width≤300μS, Duty Cycle≤2%
2. Essentially independent of operating temperature