HFH9N90 Datasheet, PDF (2/6 Pages) SemiHow Co.,Ltd. – 900V N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.
HFH9N90
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
Min. Typ.
900
I_DSS Zero Gate Voltage Drain Current
I_GSS Gate – Body Leakage
On Characteristics
V_GS(th) Gate Threshold Voltage
3.0
R_DS(on) Static Drain-Source On-Resistance
1.1
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
2200
Coss ^{Output Capacitance}
180
Crss ^{Reverse Transfer Capacitance}
15
t_d(on) Turn - On Delay Time
60
tr Rise Time
130
t_d(off) Turn - Off Delay Time
110
t_f
Fall Time
80
Qg Total Gate Charge
47
Qgs Gate–Source Charge
15
Qgd Gate–Drain Charge
20
Drain-Source Diode Characteristics and Maximum Ratings
Continuous Source–Drain Diode
I_S
Forward Current
Pulsed Drain-Source Diode
I_SM
Forward Current
Source–Drain Diode Forward
V_{SD On–Voltage}
Max. Unit
Conditions
V
1 μA
10 μA
±100 nA
I_D=250μA ,V_GS=0V
V_DS =900V, V_GS=0V
V_DS =720V, V_GS=0V,Tc=125℃
V_GS= ±30V , V_DS =0V
5.0 V V_DS = V_GS , ID=250μA
1.4 Ω V_GS=10V, ID=4.5A
pF
V_DS = 25 V, V_GS = 0V,
pF
f = 1.0 MHz
pF
nS
nS ^{VDS = 450V, ID=9A,}
R_G= 25 Ω
nS _{(Note 4,5)}
nS
nC
V_DS=720V, ID=9A,
nC _{VGS = 10 V (Note 4,5)}
nC
9
A
36 A
1.4
V ^IS=9A,VGS=0
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=21mH, I_AS=9.0A, V_DD=50V, R_G=25 Ω ,Starting T_J=25℃
3. I_SD≤9A, di/dt≤200A/μS,V_DD≤BVDSS, Starting T_J=25℃
4. Pulse Test: Pulse width≤300μS, Duty Cycle≤2%
5. Essentially independent of operating temperature