HCP6C60 Datasheet, PDF (2/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Silicon Controlled Rectifier

Shantou Huashan Electronic Devices Co.,Ltd.
HCP6C60
█ Electrical Characteristics（T_a=25℃ unless otherwise specified）
Symbol
Items
Min. Typ. Max. Unit
Conditions
Repetitive Peak Off-State
I_DRM
Current
10 uA
200
V_AK=V_DRM
T_c=25℃
T_c=125℃
V_TM
Peak On-State Voltage (1)
1.6 V
I_TM=9A,tp=380µs
I_GT
Gate Trigger Current（2）
V_GT
Gate Trigger Voltage (2)
V_GD
Non-Trigger Gate Voltage
0.2
I_H
Holding Current
15
1.5
20
mA
V
V
mA
V_AK =6V(DC), R_L=10 ohm
T_c=25℃
V_AK =6V(DC), R_L=10 ohm
T_c=25℃
V_AK =12V, R_L=100 ohm
T_c=125℃
IT=100mA,Gate open,
T_c=25℃
Rth(j-c) ^{Thermal Resistance}
3.12 ℃/W ^{Junction to Case}
Rth(j-a) ^{Thermal Resistance}
dv/dt
Critical Rate of Rise Off-state
Voltage
200
89
℃/W ^{Junction to Ambient}
Linear slope up to VD=VDRM67%
V/µs _{Gate open Tj=125℃}
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. R_GK current is not included in measurement
█ Performance Curves
FIGURE 1 – Gate Characteristics
FIGURE 2 – Maximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)