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| HCP10C60 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – Silicon Controlled Rectifier | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Electrical Characteristics Ta=25
Symbol
IDRM
Items
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
Min. Typ.
Max.
10
200
1.6
Unit
Conditions
VA K = VDRM
uA Ta=25
Ta=125
V ITM=20A,tp=380µs
IGT Gate Trigger Current 2
15
mA VAK =6V(DC), RL=10 ohm
VG T Gate Trigger Voltage (2)
VGD Non-Trigger Gate Voltage
0.2
IH
Holding Current
Rth(j-c) Thermal Resistance
Rth(j-a) Thermal Resistance
dv/dt Critical Rate of Rise Off-state 200
Voltage
1.5
V VAK =6V(DC), RL=10 ohm
Ta=25
V VAK =12V, RL=100 ohm
Ta=125
20
IT=100mA,Gate open,
mA Ta=25
1.3
/W Junction to Case
60
/W Junction to Ambient
V/µs Linear slope up to VD=VDRM67%
Gate open Tj=125
1. Forward current applied for 1 ms maximum duration,duty cycle 1%.
2. RGK current is not included in measurement
Performance Curves
FIGURE 1 â Gate Characteristics
FIGURE 2 âMaximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)
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