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| KSH13009 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON T RANSISTOR
KSH13009
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
5~150
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
150
100W
700V
VCEO Collector-Emitter Voltage
400V
VEBO Emitter-Base Voltage
9V
IC Collector Current DC
IB Base Current
12A
6A
TO-220
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCEO
IEBO
HFE 1
HFE 2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
Cob
fT
tON
tSTG
tF
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Min Typ
Max Unit
Test Conditions
IC=10mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=5A
VCE=5V, IC=8A
IC=5A, IB=1A
IC=8A, IB=1.6A
IC=12A, IB=3A
IC=5A, IB=1A
IC=8A, IB=1.6A
VCB=10V,f=0.1MHz
VCE=10V,IC=0.5A
s
s VCC=125V, IC=8A,
s IB1=1.6A,IB2=-1.6A
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