KSH13007F Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13007F
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current DC
I_CP Collector Current Pulse
I_B Base Current
65~150
150
40W
700V
400V
9V
8A
16A
4A
T_a=25
Symbol
Characteristics
BVCEO Collector-Emitter Sustaining Voltage
Min Typ Max
400
IEBO
Emitter-Base Cut-off Current
1
HFE
DC Current Gain
10
40
5
30
VCE(sat) Collector- Emitter Saturation Voltage
1
2
3
VBE(sat) Base- Emitter Saturation Voltage
1.2
1.6
Cob
Output Capacitance
f_T
Current Gain-Bandwidth Product
tON
Turn On Time
110
4
1.6
tS
Storage Time
3
tF
Fall Time
0.7
TO-220F
1 Base B
2 Collector C
3 Emitter, E
Unit
V
mA
V
V
V
V
V
pF
MHz
s
Test Conditions
I_C=10mA, I_B=0
V_EB=9V, I_C=0
V_CE=5V, I_C=2A
V_CE=5V, I_C=5A
I_C=2A, I_B=0.4A
I_C=5A, I_B=1A
I_C=8A, I_B=2A
I_C=2A, I_B=0.4A
I_C=5A, I_B=1A
V_CB=10V, f=0.1MHz
V_CE=10V, I_C=0.5A
V_CC=125V, I_C=5A,
s
I_B1=-I_B2=1A
s
RL=50
hFE Classification H1 10--16 H2 14--21 H3 19--26 H4 24--31 H5 29--40