HX3199 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HX3199
█ APPLICATIONS
Small power amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………200mW
V_CBO——Collector-Base Voltage………………………………50V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………150mA
TO-92S
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 50
V I_C=10μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
50
V I_C=100μA, I_B=0
ICBO Collector Cut-off Current
0.1 μA V_CB=50V, I_E=0
IEBO Emitter Cut-off Current
0.1 μA V_EB=5V, I_C=0
HFE DC Current Gain
70
700
V_CE=6V, I_C=2mA
VCE(sat) Collector- Emitter Saturation Voltage
0.1 0.25 V I_C=100mA, I_B=10mA
fT
Current Gain-Bandwidth Product
80
MHz V_CE=6V, I_C=10mA
Cob Output Capacitance
2.0 3.5 pF V_CB=10V, I_E=0，f=1MHz
NF Noise Figure
1.0
10
dB
V_CE=6V, I_C=100μA
f=1KHz,Rg=10KΩ
█ hFE Classification
O
70—140
Y
120—240
GR
200—400
BL
350—700