HX2785 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HX2785
APPLICATIONS
Amplifier And Speed Switching
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
25 0mW
V_CBO Collector-Base Voltage
60V
V_CEO Collector-Emitter Voltage
50V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
100mA
TO-92S
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat)
VBE(sat)
VBE
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
I_C=1mA, I_B=0
A VCB=60V, IE=0
A VEB=5V, IC=0
V_CE=6V, I_C=0.1mA
V_CE=6V, I_C=1mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=6V, I_C=1mA
V_CE=6V, I_C=10mA
V_CB=6V, I_E=0 f=1
hFE Classification
R
J
H
F
E
K