HTN4A60 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NON INSULATED TYPE TRIAC (TO-126 PACKAGE)

Shantou Huashan Electronic Devices Co.,Ltd.
HTN4A60
NON INSULATED TYPE TRIAC (TO-126 PACKAGE)
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I_T(RMS)=4A)
* High Commutation dv/dt
General Description
The Triac HTN4A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings T_a=25
T_stg Storage Temperature
T_j Operating Junction Temperature
P_GM Peak Gate Power Dissipation
V_DRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-state Current Ta=66
V_GM
I_GM
ITSM
Peak Gate Voltage
Peak Gate Current
Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
Electrical Characteristics T_a=25
-40~125
-40~125
1.5W
600V
4.0A
7.0V
0.5A
30/33A
Symbol
I_DRM
Items
Repetitive Peak Off-State Current
V_TM
I+_GT1
I- _GT1
I- _GT3
V+ _GT1
V- _GT1
V- _GT3
V_GD
(dv/dt)c
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
Gate Trigger Voltage
Non-trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
I_H
Rth(j-c)
Holding Current
Thermal Resistance
Min. Typ. Max. Unit
Conditions
1.0 mA V_D=V_DRM,Single Phase,
Half Wave, T_J=125
1.6 V ^{IT=6A, Inst. Measurement}
20 mA V_D=6V, R_L=10 ohm
20 mA V_D=6V, R_L=10 ohm
20 mA V_D=6V, R_L=10 ohm
1.5 V V_D=6V, R_L=10 ohm
1.5 V V_D=6V, R_L=10 ohm
1.5 V V_D=6V, R_L=10 ohm
0.2
V T_J=125 ,V_D=1/2V_DRM
5.0
V/µS T_J=125 ,V_D=2/3V_DRM
(di/dt)c= -3A/ms
5.0
3.5
mA
/W ^{Junction to case}