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HTF8A60 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – INSULATED TYPE TRIAC (TO-220F PACKAGE)
Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A60
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=8A)
* High Commutation dv/dt
█ General Description
TO-220F
The Triac HTF8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
12 3
█ Absolute Maximum Ratings（Ta=25℃）
Tstg——Storage Temperature……………………………………………………………… -40~125℃
Tj ——Operating Junction Temperature …………………………………………………… -40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT（RMS）——R.M.S On-State Current（Ta=89℃）………………………………………………… 8A
VGM——Peak Gate Voltage………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A
VISO——Isolation Breakdown Voltage （RMS.A.C.1 minute）………………………………… 1500V
█ Electrical Characteristics（Ta=25℃）
Symbol
Items
IDRM Repetitive Peak Off-State Current
VTM
I+GT1
I- GT1
I-GT3
V+ GT1
V- GT1
V- GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
Min. Typ. Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
0.2
10
15
3.7
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
mA
℃/W
Conditions
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
IT=12A, Inst. Measurement
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
TJ=125℃,VD=1/2VDRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-4A/ms
Junction to case
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