 English |
|
|
|
|
|
|
|
| HSBD441 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
| |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD441
APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj J unction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VCES Collector-Emitter Voltage
VEBO Emitter- Base Voltage
IC Collector Current Pulse
IC Collector Current DC
IB Base Current
55~150
150
36W
80V
80V
80V
5V
7A
4A
1A
1 Emitter, E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO
IEBO
ICES
*HFE 1
*HFE 2
*HFE 3
*VCE(sat)
*VBE(on1)
*VBE(on2)
VCEO(sus)
ft
*
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
VCB=80V, IE=0
VEB=5V, IC=0
VCE=80V, VEB=0
VCE=5V, IC=10mA
VCE=1V, IC=500mA
VCE=1V, IC=2A
IC=2A, IB=0.2A
VCE=5V, IC=10mA
VCE=1V, IC=2A
IC=100mA, IB=0
VCE=1V, IC=250mA,
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese